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13(c) that the fringe field in the “flat” inter-sphere regime is essentially zero, thus it has no effect on the lateral domain motion once lost the nu- 2 Fabrication and Characterization of Ferroelectric Crystals: GaN and LiNbO3 41 Fig. 12. (a) Far-field red SHG images, (b) wavelength acceptance width, and (c) external SHG conversion efficiency for Sample C of Fig. 11 using a 1200 nm ns pump laser cleation preference to its edge component as discussed in Fig. 13(b). 25Ec can be found underneath the region of the self-assembled sphere, there the corresponding Ez value is well below Ec and thus cannot initiate the domain reversal process.

5 µm on the −Z face of LiNbO3 due to a finite lateral domain motion. We should comment on this field modulation technique with a recent report that employs thickness modulation of a 2D photo-resist to fabricate submicron reversed domains in LiNbO3 [67]. In the latter case, the thickness modulation in the photo-resist was realized by moiré interference lithography to have the resist pattern size and thickness to follow the intensity modulation. -H. Peng et al. of electric field overpoling, submicron surface domain structures can be realized.

Nutt, V. C. Gupta, Appl. Phys. Lett. Z. Yin, Microwave Opt. Technol. Lett. 22, 396 (1999) F. Lacour, N. P. Bernal, A. Sabac, C. Bainier, M. Spajer, Opt. Mater. 27, 1421 (2005) H. P. B. Wehrspohn, H. Hermann, W. Sohler, J. Vac. Sci. Technol. A 24, 1012–1015 (2006) V. Foglietti, E. Cianci, D. Pezzeta, C. Sibilia, M. Marangoni, R. Osellame, R. Ramponi, Microelectron. Eng. S. Y. K. H. Yoon, Opt. Mater. W. Chong, A. P. W. Austin, Appl. Surf. Sci. 201(1–4), 196–203 (2002) L. X. C. Chong, IEEE Photonics Technol.

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