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The quantity W, termed the diode ideality factor, is in general greater or equal to unity (W> 1) and may vary with bias and temperature depending on the details of electron and hole transport across the MS junction. 3,16 ) The quantity /o is called the diode saturation current and it depends on the transport mechanism dominating current flow at the MS junction. --0B o " (6) where A* is the effective Richardson constant and ΦΒΟ is the quantity given by Eq. , it is the barrier height at thermodynamic equilibrium.

GRISEL A N D V. D E M ARNE CSEM (Swiss Center for Electronics and Microtechnology) Neuchâtel, Switzerland 1. 1,2) Among the great number of ways gaseous ambient can change the conductivity of semiconductors, there are many reactions which can be acceptable as sensing mechanisms. 34 ) A reversible gas adsorption mechanism is expected to be the dominant reaction in semiconductor gas sensors. In this case the adsorbed gas atoms inject electrons into or extract electrons from an n- type semiconductor depending on whether they are reducing or oxidizing agents respectively.

46, 3876 (1975). M. S. Shivaraman, / . Appl. , 47, 3592 (1976). T. L. Poteat, B. Lalevic, IEEE Trans. Electron Devices, ED-29, 123 (1982). P. F. Ruths, S. Ashok, S. J. Fonach, J. M. Ruths, IEEE Trans, Electron. Devices, ED-28, 1003 (1981) S. J. Fonash, Z. Li, M. J. O' Leary, / . Appl. Phys. , 58 (11) , 4415 (1985) . Z. Li, S. J. Fonash, IEEE Intl. Device Meeting, Washington, DC, December 1985. S. J. Fonash, Z. Li, in : Fundamentals and Application of Chemical Sensors. (D. Schwetzle and R. ), American Chemical Society, Washington, DC, 177-202 (1986).

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